Author(s)

Ming Wei

Affiliation(s)

Southwest China Institute of Electronic Technology, Chengdu 610036, Sichuan, China.

Corresponding Author

Ming Wei

ABSTRACT

This paper presents the design and implementaion of a Ka-band Silicon-Based 3D-Heterogeneous-Integrated 8-channel transmit microsystem. By introducing capacitive and inductive transition structures in the 3D passive interconnections of the microsystem, up to 40GHz broadband impedance matching is realized. Meanwhile, a three-layer Cu-Sn bonded silicon interposer architecture and its corresponding fabrication process are developed for the implementation of the two stacked sub-modules. And sub-modules stacking and fan-out of ball grid array (BGA) pins are achieved using solders and solder balls with differentiated temperature gradients. The fabricated 8-channel transmit microsystem features 1 input port and 8 output ports, with an operating frequency band over 27–32 GHz, a saturated output power of 23 dBm, an overall dimensions of 9.1 mm × 8.5 mm × 3.25 mm, and a weight of less than 0.1 g per channel.

KEYWORDS

3D heterogeneous integration; Microsystem; Silicon interposer; Metal bonding; Temperature gradient

CITE THIS PAPER

Ming Wei. Design and implementation of a Ka-band silicon-based 3D-heterogeneous-integrated 8-channel transmit microsystem. Eurasia Journal of Science and Technology. 2026, 8(1): 56-69. DOI: https://doi.org/10.61784/ejst3135.

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