Author(s)

Ghanim Thiab Hasan^1,*, Ali Hlal Mutlaq², Nabeel Akram Mohamed Ali³

Affiliation(s)

¹Electrical Engineering Department, Alshirqat Engineering College, Tikrit University, Ttikrit, Iraq.

²Medical Devices Department, Technical College, Al- Kitab University, Kirkuk, Iraq.

³Electrical Department, Kirkuk Technical College, Northern Technical University, Kirkuk, Iraq.

Corresponding Author

Ghanim Thiab Hasan

ABSTRACT

An increase in the board temperature can have an effect on the basic characteristics of electronic elements which may influence the performance of the circuit. The objective of this paper is to investigate the influence of thermal rise on some characteristics of Bipolar junction transistor. Some static and dynamic characteristics have been experimentally measured and analyzed of a transistor type 2SC2120 at high temperatures. The obtained results indicate that with an increase in temperature over the range 30-90 °C, a collector current will increase by about 0.04 A, whereas the current will be around 0.12 A. The applied threshold voltage has been droped from 0.63 V to 0.45 V. The obtained results also illustrate that the reverse breakdown of emitter-to-base transition capacitance has been increased from 41 pF to 47 pF.

KEYWORDS

BJT; Temperature; Performance; Static and dynamic characteristics

CITE THIS PAPER

Ghanim Thiab Hasan, Ali Hlal Mutlaq, Nabeel Akram Mohamed Ali. Investigate the performance of nonlinear bipolar transistor at high temperature. Journal of Manufacturing Science and Mechanical Engineering. 2024, 2(2): 20-26. DOI: 10.61784/msme3002.

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